Light-emitting device, method for manufacturing the same, and cellular phone

ABSTRACT

The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.14/103,990, filed Dec. 12, 2013, now pending, which is a continuation ofU.S. application Ser. No. 12/617,379, filed Nov. 12, 2009, now U.S. Pat.No. 8,610,155, which claims the benefit of a foreign priorityapplication filed in Japan as Serial No. 2008-294661 on Nov. 18, 2008,all of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention disclosed in this specification relates to alight-emitting device, a method for manufacturing the light-emittingdevice, and a cellular phone.

2. Description of the Related Art

Conventionally, a light-emitting device having a light-emitting elementhas been formed through the following steps of: 1) forming asemiconductor circuit for driving a light-emitting element over asubstrate such as a glass substrate by using a semiconductor process, 2)forming an insulating film (a planarization film) over the semiconductorcircuit, and 3) forming a light-emitting element over the insulatingfilm. In other words, a semiconductor circuit for driving alight-emitting element and the light-emitting element are formed bybeing stacked over a substrate in this order.

Since a light-emitting device manufactured through the conventionalmanufacturing process has a light-emitting element over a semiconductorcircuit for driving the light-emitting element, there is a step(irregularity) or the like resulting from an element, a wiring, or thelike that is formed below the light-emitting element (see Reference 1).

[Reference 1] Japanese Published Patent Application No. 2003-258211

SUMMARY OF THE INVENTION

As mentioned above, one of problems is that defective coverage may becaused by a step or the like resulting from an element, a wiring, or thelike that is formed below a light-emitting element.

Other problems that occur when a semiconductor circuit for driving alight-emitting element is formed and then the light-emitting element isformed thereover are long manufacturing time and high manufacturingcost.

Another problem is that a light-emitting layer in a light-emittingelement is sensitive to moisture, so that the entry of moisture into alight-emitting element should be prevented.

In addition, a problem that occurs when a light-emitting element and asemiconductor circuit for driving the light-emitting element are formedover a hard substrate such as a glass substrate is that thelight-emitting element and the semiconductor circuit cannot beincorporated into electronic devices of various shapes because such ahard substrate lacks flexibility and the shape cannot be changed.

A problem that occurs when a light-emitting element and a semiconductorcircuit for driving the light-emitting element are formed over aflexible substrate is that although the shape of the substrate can befreely changed, stress may damage the light-emitting element and thesemiconductor circuit for driving the light-emitting element.

In view of the above problems, in accordance with the inventiondisclosed in this specification, a semiconductor circuit for driving alight-emitting element and the light-emitting element are disposed overflexible substrates and attached to each other such that thelight-emitting element and the semiconductor circuit for driving thelight-emitting element are electrically connected to each other. Thelight-emitting element and the semiconductor circuit for driving thelight-emitting element may be formed over different substrates andseparated from the respective substrates, and then may be disposed overrespective flexible substrates and attached to each other.

Because the light-emitting element and the semiconductor circuit fordriving the light-emitting element are disposed over differentsubstrates, the semiconductor circuit is not formed below thelight-emitting element.

In addition, a projecting portion is formed in part of thelight-emitting element, and the light-emitting element and thesemiconductor circuit for driving the light-emitting element areattached to each other such that a space portion is providedtherebetween. A desiccant can be disposed in the space portion.

Because the light-emitting element and the semiconductor circuit fordriving the light-emitting element can be disposed over flexiblesubstrates, the shape can be changed even after the light-emittingelement and the semiconductor circuit are attached to each other.

Furthermore, the light-emitting element and the semiconductor circuitfor driving the light-emitting element are disposed over flexiblesubstrates such that a space (a space portion) for relaxing stress isprovided between the light-emitting element and the semiconductorcircuit for driving the light-emitting element.

The invention disclosed in this specification relates to alight-emitting device which includes a first flexible substrate having afirst electrode, a light-emitting layer over the first electrode, and asecond electrode with a projecting portion over the light-emitting layerand a second flexible substrate having a semiconductor circuit and athird electrode electrically connected to the semiconductor circuit. Theprojecting portion of the second electrode and the third electrode areelectrically connected to each other.

The invention relates to a light-emitting device in which a desiccant isprovided in a space portion that is generated by disposing the firstflexible substrate and the second flexible substrate to face each other.

The invention disclosed in this specification also relates to alight-emitting device which includes a first flexible substrate having afirst electrode, a light-emitting layer over the first electrode, and asecond electrode with a projecting portion over the light-emitting layerand a second flexible substrate having a semiconductor circuit and athird electrode electrically connected to the semiconductor circuit. Theprojecting portion of the second electrode and the third electrode areelectrically connected to each other through an anisotropic conductivefilm that contains conductive particles.

The invention relates to a light-emitting device which includes astructure body covering the semiconductor circuit and having a fibrousbody and an organic resin, and the third electrode penetrating thestructure body and formed with a conductive resin.

The invention relates to a method for manufacturing a light-emittingdevice, which includes the steps of: forming a first separation layer, afirst insulating film (a base film), a first electrode, a light-emittinglayer, and a second electrode with a projecting portion over a firstsubstrate; separating the first insulating film, the first electrode,the light-emitting layer, and the second electrode from the firstsubstrate by using the first separation layer; forming a first adhesivelayer over a first flexible substrate; attaching the first insulatingfilm, the first electrode, the light-emitting layer, and the secondelectrode to the first flexible substrate with the first adhesive layer;forming a second separation layer, a second insulating film, asemiconductor circuit, and a third electrode electrically connected tothe semiconductor circuit over a second substrate; separating the secondinsulating film, the semiconductor circuit, and the third electrode fromthe second substrate by using the second separation layer; forming asecond adhesive layer over a second flexible substrate; attaching thesecond insulating film, the semiconductor circuit, and the thirdelectrode to the second flexible substrate with the second adhesivelayer, and electrically connecting the projecting portion of the secondelectrode and the third electrode to each other.

The invention relates to a method for manufacturing a light-emittingdevice in which a desiccant is provided in a space portion that isgenerated by disposing the first flexible substrate and the secondflexible substrate to face each other.

The invention disclosed in this specification also relates to a methodfor manufacturing a light-emitting device, which includes the steps of:forming a first separation layer, a first insulating film (a base film),a first electrode, a light-emitting layer, and a second electrode with aprojecting portion over a first substrate; separating the firstinsulating film, the first electrode, the light-emitting layer, and thesecond electrode from the first substrate by using the first separationlayer; forming a first adhesive layer over a first flexible substrate;attaching the first insulating film, the first electrode, thelight-emitting layer, and the second electrode to the first flexiblesubstrate with the first adhesive layer; forming a second separationlayer, a second insulating film, a semiconductor circuit, and a thirdelectrode electrically connected to the semiconductor circuit over asecond substrate; separating the second insulating film, thesemiconductor circuit, and the third electrode from the second substrateby using the second separation layer; forming a second adhesive layerover a second flexible substrate; attaching the second insulating film,the semiconductor circuit, and the third electrode to the secondflexible substrate with the second adhesive layer; forming ananisotropic conductive film containing conductive particles between thefirst flexible substrate and the second flexible substrate; andelectrically connecting the projecting portion of the second electrodeand the third electrode to each other through the anisotropic conductivefilm.

The invention relates to a method for manufacturing a light-emittingdevice, which includes the step of forming a structure body having afibrous body and an organic resin to cover the semiconductor circuit,and the third electrode is formed with a conductive resin to penetratethe structure body.

The invention disclosed in this specification also relates to a cellularphone which includes a light-emitting device including a first flexiblesubstrate having a first electrode, a light-emitting layer over thefirst electrode, and a second electrode with a projecting portion overthe light-emitting layer and a second flexible substrate having asemiconductor circuit and a third electrode electrically connected tothe semiconductor circuit and a housing incorporating the light-emittingdevice and having a longitudinal direction and a lateral direction. Inthe light-emitting device, the projecting portion of the secondelectrode and the third electrode are electrically connected to eachother. The light-emitting device is disposed on a front side and in anupper portion in the longitudinal direction of the housing.

Accordingly, the semiconductor circuit is not formed below thelight-emitting element and thus the generation of defective coverage dueto steps can be suppressed.

In addition, because a desiccant can be disposed in the space portionbetween the light-emitting element and the semiconductor circuit fordriving the light-emitting element, the entry of moisture into thelight-emitting layer can be prevented.

In addition, because the light-emitting element and the semiconductorcircuit for driving the light-emitting element can be disposed overflexible substrates, the shape can be changed even after thelight-emitting element and the semiconductor circuit are attached toeach other, and the light-emitting element and the semiconductor circuitfor driving the light-emitting element can be incorporated intoelectronic devices of various shapes.

Furthermore, because a space (a space portion) is provided between thelight-emitting element and the semiconductor circuit for driving thelight-emitting element which are disposed over flexible substrates,stress can be relaxed even when the flexible substrates are bent.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a manufacturing process ofa light-emitting device.

FIGS. 2A to 2C are cross-sectional views illustrating a manufacturingprocess of a light-emitting element.

FIGS. 3A and 3B are cross-sectional views illustrating a manufacturingprocess of a light-emitting element.

FIGS. 4A and 4B are cross-sectional views illustrating a manufacturingprocess of a light-emitting element.

FIGS. 5A and 5B are cross-sectional views illustrating a manufacturingprocess of a light-emitting element.

FIGS. 6A to 6C are cross-sectional views illustrating a manufacturingprocess of a light-emitting element.

FIGS. 7A to 7D are cross-sectional views illustrating a manufacturingprocess of a semiconductor circuit element.

FIGS. 8A to 8C are cross-sectional views illustrating a manufacturingprocess of a semiconductor circuit element.

FIGS. 9A to 9C are cross-sectional views illustrating a manufacturingprocess of a semiconductor circuit element.

FIGS. 10A and 10B are cross-sectional views illustrating a manufacturingprocess of a semiconductor circuit element.

FIG. 11 is a cross-sectional view of a light-emitting device.

FIG. 12 is a cross-sectional view of a light-emitting device.

FIGS. 13A to 13D are top views and a cross-sectional view of a cellularphone.

FIGS. 14A and 14B are top views of a sheet-like fibrous body.

FIG. 15 is a top view of a sheet-like fibrous body.

FIG. 16 is a cross-sectional view of a structure body.

FIGS. 17A and 17B are a cross-sectional view of a sheet-like fibrousbody and a cross-sectional view of a structure body, respectively.

FIGS. 18A and 18B are cross-sectional views illustrating a manufacturingprocess of a semiconductor circuit element.

FIG. 19 is a cross-sectional view illustrating a manufacturing processof a light-emitting device.

FIG. 20 is a cross-sectional view of a light-emitting device.

FIG. 21 is a cross-sectional view of a light-emitting device.

FIGS. 22A and 22B are top views of a cellular phone.

FIGS. 23A and 23B are cross-sectional views illustrating a manufacturingprocess of a semiconductor circuit element.

FIGS. 24A and 24B are a cross-sectional view illustrating amanufacturing process of a semiconductor circuit element and across-sectional view of a light-emitting device.

FIG. 25 is a cross-sectional view of a cellular phone.

FIG. 26 is a top view of an EL panel.

FIGS. 27A to 27D are top views and a cross-sectional view of a cellularphone.

FIGS. 28A and 28B are perspective views of cellular phones.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the invention disclosed in this specification will behereinafter described with reference to the accompanying drawings. Notethat the invention disclosed in this specification can be carried out ina variety of different modes, and it is easily understood by thoseskilled in the art that the modes and details of the invention disclosedin this specification can be changed in various ways without departingfrom the spirit and scope thereof. Therefore, the invention disclosed inthis specification should not be interpreted as being limited to thedescription in the embodiments. Note that in the accompanying drawings,the same portions or portions having similar functions are denoted bythe same reference numerals, and repetitive description thereof isomitted.

Note that in this specification, a semiconductor circuit refers to acircuit which functions by utilizing a semiconductor. Furthermore, asemiconductor device refers to an element or a device in general whichfunctions by utilizing a semiconductor. Electric devices includingelectronic circuits, liquid crystal display devices, light-emittingdevices, and the like and electronic devices on which the electricdevices are mounted are included in the category of semiconductordevices.

Note that ordinal numbers such as “first” and “second” in thisspecification are used simply for convenience and do not restrict theorder of stacked layers, the order of manufacturing steps, and the like.

Embodiment 1

In this embodiment, a light-emitting device and a method formanufacturing the light-emitting device are described with reference toFIG. 1, FIGS. 2A to 2C, FIGS. 3A and 3B, FIGS. 4A and 4B. FIGS. 5A and5B, FIGS. 6A to 6C, FIGS. 7A to 7D, FIGS. 8A to 8C, FIGS. 9A to 9C,FIGS. 10A and 10B, FIG. 11, FIG. 12, FIGS. 14A and 14B, FIG. 15, FIG.16, FIGS. 17A and 17B, FIGS. 18A and 18B, FIG. 19, FIG. 20, and FIG. 21.

First, a light-emitting element and a method for manufacturing thelight-emitting element are described with reference to FIGS. 2A to 2C,FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS. 6A to 6C.

First, a separation layer 132, a base film 102, and an electrode 111 areformed over a substrate 131 (see FIG. 2A). As the substrate 131, a glasssubstrate, a quartz substrate, a semiconductor substrate, a ceramicsubstrate, or the like may be used.

The base film 102 may be a silicon oxide film, a silicon nitride film, asilicon oxide film containing nitrogen, or a silicon nitride filmcontaining oxygen or may be a stacked layer of any two or more of thesefilms. The base film 102 functions to prevent the entry of moisture intoa light-emitting layer 112 which is to be formed later.

As the separation layer 132, a single layer or a stacked layer is formedusing an element selected from tungsten (W), molybdenum (Mo), titanium(Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium(Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium(Os), iridium (Ir), and silicon (Si) or an alloy material or a compoundmaterial mainly containing any of the elements, by a plasma CVD method,a sputtering method, or the like. The crystalline structure of a layercontaining silicon may be any one of amorphous, microcrystalline, andpolycrystalline structures.

When the separation layer 132 has a single-layer structure, it ispreferable to form a layer containing any one of the following:tungsten, molybdenum, a mixture of tungsten and molybdenum, an oxide oftungsten, an oxynitride of tungsten, a nitride oxide of tungsten, anoxide of molybdenum, an oxynitride of molybdenum, a nitride oxide ofmolybdenum, an oxide of a mixture of tungsten and molybdenum, anoxynitride of a mixture of tungsten and molybdenum, and a nitride oxideof a mixture of tungsten and molybdenum. Note that a mixture of tungstenand molybdenum corresponds to an alloy of tungsten and molybdenum, forexample.

When the separation layer 132 has a stacked structure, it is preferableto form a layer containing tungsten, molybdenum, or a mixture oftungsten and molybdenum as a first layer and to form a layer containingan oxide of tungsten, an oxide of molybdenum, an oxide of a mixture oftungsten and molybdenum, an oxynitride of tungsten, an oxynitride ofmolybdenum, or an oxynitride of a mixture of tungsten and molybdenum asa second layer. In this manner, when the separation layer 132 is formedto have a stacked structure, a stacked structure of a metal film and ametal oxide film is preferable. Examples of a method for forming a metaloxide film include a method of forming a metal oxide film directly by asputtering method, a method of forming a metal oxide film by oxidizing asurface of a metal film formed over the substrate 131 by heat treatmentor by plasma treatment in an oxygen atmosphere, and the like.

As the metal film, a film can be formed using an element selected fromtitanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co),zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd),osmium (Os), and iridium (Ir), as well as tungsten (W) and molybdenum(Mo) as mentioned above, or an alloy material or a compound materialmainly containing any of the elements.

Note that an insulating film such as a silicon oxide film, a siliconnitride film, a silicon oxide film containing nitrogen, or a siliconnitride film containing oxygen may be formed over the substrate 131before the separation layer 132 is formed, and the separation layer 132may be formed over the insulating film. By such an insulating filmprovided between the substrate 131 and the separation layer 132, animpurity contained in the substrate 131 can be prevented from enteringan upper layer. In addition, in a subsequent laser irradiation step, thesubstrate 131 can be prevented from being etched. Note that a siliconoxide film containing nitrogen is distinguished from a silicon nitridefilm containing oxygen in that the former contains more oxygen thannitrogen, whereas the latter contains more nitrogen than oxygen.

The electrode 11 l may be formed using a conductive film having alight-transmitting property. The conductive film having alight-transmitting property can be formed by a sputtering method, avacuum evaporation method, or the like using a material such as indiumoxide (In₂O₃) or an alloy of indium oxide and tin oxide (In₂O₃—SnO₂)(indium tin oxide (ITO)). Alternatively, an alloy of indium oxide andzinc oxide (In₂O₃—ZnO) may be used. Furthermore, zinc oxide (ZnO) isalso a suitable material, and moreover, zinc oxide to which gallium (Ga)is added (ZnO:Ga) in order to increase conductivity or visible lighttransmissivity may be used. When the electrode 111 is formed using sucha material, the electrode 111 serves as an anode.

When the electrode 11 l is used as a cathode, an extremely thin film ofa material with a low work function, such as aluminum, can be used.Alternatively, a stacked structure of a thin film of such a material andthe above-mentioned conductive film having a light-transmitting propertycan be employed.

Next, an insulating film 121 is formed to cover the base film 102 andthe electrode 111 (see FIG. 2B). The insulating film 121 can be formedusing an inorganic material or an organic material.

As an inorganic material, for example, silicon oxide, silicon nitride,silicon oxide containing nitrogen, or diamond-like carbon (DLC) or astacked structure of two or more of these materials can be used. As anorganic material, polyimide, acrylic, polyamide, polyimide amide,resist, benzocyclobutene, or siloxane or a stacked structure of two ormore of these materials may be used.

Siloxane has a skeleton formed by the bond of silicon (Si) and oxygen(O), and is formed using as a starting material a polymer materialincluding at least hydrogen or at least one of fluorine, an alkyl group,and aromatic hydrocarbon as a substituent. As the substituent, a fluorogroup may be used, or both an organic group containing at least hydrogenand a fluoro group may be used as the substituents.

Next, using the insulating film 121, a spacer 105, a partition 104 a,and a partition 104 b are formed (see FIG. 2C). At this time, the spacer105 is formed into a forward tapered shape; in other words, the spacer105 is formed such that its cross-sectional shape is a trapezoid whoseupper base is shorter than the lower base. The partition 104 a and thepartition 104 b are each formed into an inverted tapered shape; in otherwords, the partition 104 a and the partition 104 b are each formed suchthat its cross-sectional shape is a trapezoid whose upper base is longerthan the lower base.

The cross-sectional shape of the spacer 105 may be a trapezoid whosefour corners have a curvature radius, in order to improve the coverageof the spacer 105 with a light-emitting layer 112 and an electrode 113which are to be formed later.

The partition 104 a and the partition 104 b each function to separatethe light-emitting layer 112 and the electrode 113, which are to beformed later, of each pixel from those of other pixels.

Note that without forming the insulating film 121, the spacer 105, thepartition 104 a, and the partition 104 b may be formed into theirrespective shapes from the beginning, using an insulator. For example,the partition 104 a and the partition 104 b may be formed into aninverted tapered shape from the beginning by an inkjet method or thelike.

Next, an insulating film 138 is formed using any of the materialsmentioned in the description of the insulating film 121 to cover thebase film 102, the electrode 111, the spacer 105, the partition 104 a,and the partition 104 b (see FIG. 3A). Alternatively, the insulatingfilm 138 may be formed using a material different from that of theinsulating film 121.

Using the insulating film 138, a spacer 106 is formed over the spacer105 (see FIG. 3B). The spacer 106 is formed into a forward taperedshape; in other words, the spacer 106 is formed such that itscross-sectional shape is a trapezoid whose upper base is shorter thanthe lower base.

Note that without forming the insulating film 138, the spacer 106 may beformed into that shape from the beginning, using an insulator. Forexample, the spacer 106 may be formed into a forward tapered shape fromthe beginning by an inkjet method or the like.

The cross-sectional shape of the spacer 106 may be a trapezoid whosefour corners have a curvature radius, in order to improve the coverageof the spacer 106 with the light-emitting layer 112 and the electrode113 which are to be formed later.

When the spacer 105 and the spacer 106 are provided, the light-emittinglayer 112 and the electrode 113 which are formed later are raised alongthe spacer 105 and the spacer 106. In other words, a projecting portionis generated in the light-emitting layer 112 and the electrode 113, andthe projecting portion of the electrode 113 is to be electricallyconnected to a conductive resin 306 which is electrically connected to aTFT 211 as described below. The projecting portion of the electrode 113and the conductive resin 306 are connected to each other at a positionapart from the electrode 113, the light-emitting layer 112, and the TFT211: accordingly, damage to the electrode 113, the light-emitting layer112, and the TFT 211 can be prevented.

Next, the light-emitting layer 112 and the electrode 113 are formed in aregion over the electrode 111, which is surrounded by the partition 104a and the partition 104 b (see FIG. 4A). Note that an EL material layer107 a that is formed from the same material as the light-emitting layer112 and a conductive material layer 108 a that is formed from the samematerial as the electrode 113 are formed over the partition 104 a, andan EL material layer 107 b that is formed from the same material as thelight-emitting layer 112 and a conductive material layer 108 b that isformed from the same material as the electrode 113 are formed over thepartition 104 b. However, these layers are each electrically insulatedfrom the electrode 111 by the partition 104 a and the partition 104 bthat are formed from an insulating film; thus, these layers do not emitlight.

The light-emitting layer 112 may be a single layer or may be freelycombined with a layer for injection, transport, or recombination ofcarriers of both electrons and holes, in other words, a carriertransport layer, a carrier injection layer, or the like, between thelight-emitting layer and the electrode 111 or between the light-emittinglayer and the electrode 113. The light-emitting layer 112 collectivelyrefers to a light-emitting layer alone or a layer having a stackedstructure of a light-emitting layer and a carrier transport layer, acarrier injection layer, or the like.

Specific materials used for a hole injection layer, a hole transportlayer, a light-emitting layer, an electron transport layer, and anelectron injection layer are hereinafter described.

The hole injection layer is a layer that is provided in contact with ananode, either the electrode 111 or the electrode 113, and contains amaterial with an excellent hole injection property. Molybdenum oxide,vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or thelike can be used. Alternatively, the hole injection layer can be formedusing any of the following materials: phthalocyanine compounds such asphthalocyanine (abbreviation: H₂Pc) and copper phthalocyanine (CuPc);aromatic amine compounds such as4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation:DPAB) and4,4′-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl}-N-phenylamino)biphenyl(abbreviation: DNTPD); high molecular compounds such aspoly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid)(abbreviation: PEDOT/PSS); and the like.

Alternatively, as the hole injection layer, a composite material of amaterial with an excellent hole transport property which contains anacceptor material can be used. Note that, by using a material with anexcellent hole transport property which contains an acceptor material, amaterial used to form an electrode may be selected regardless of itswork function. In other words, besides a material with a high workfunction, a material with a low work function may be used for the anode.As the acceptor material,7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation:F₄-TCNQ), chloranil, or the like can be used. In addition, a transitionmetal oxide can be used. Moreover, an oxide of any of the metalsbelonging to Groups 4 to 8 of the periodic table can be used.Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromiumoxide, molybdenum oxide, tungsten oxide, manganese oxide, and rheniumoxide are preferable because they have excellent electron acceptingproperties. Among them, molybdenum oxide is especially preferablebecause it is stable in the air and its hygroscopic property is low sothat it can be easily handled.

As the material with an excellent hole transport property which is usedfor the composite material, various compounds such as an aromatic aminecompound, a carbazole derivative, aromatic hydrocarbon, and a highmolecular compound (such as oligomer, dendrimer, or polymer) can beused. Note that an organic compound used for the composite materialpreferably has an excellent hole transport property. Specifically, amaterial having a hole mobility of 10⁻⁶ cm²Ns or higher is preferable.However, materials other than these materials can also be used, as longas they have more excellent hole transport properties than electrontransport properties. Specific organic compounds which can be used forthe composite material are given below.

For example, the aromatic amine compound isN,N′-di(p-tolyl)-N,N′-diphenyl-p-phenylenediamine (abbreviation:DTDPPA), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl(abbreviation: DPAB),4,4′-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl}-N-phenylamino)biphenyl(abbreviation: DNTPD),1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene(abbreviation: DPA3B), or the like.

The carbazole derivative which can be used for the composite material isspecifically3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA1),3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA2),3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole(abbreviation: PCzPCN1), or the like.

The carbazole derivative which can be used for the composite material isalternatively 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP),1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB),9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA),1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, or the like.

The aromatic hydrocarbon which can be used for the composite materialis, for example, 2-tert-butyl-9,10-di(2-naphthyl)anthracene(abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA),2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA),9,10-di(2-naphthyl)anthracene (abbreviation: DNA),9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene(abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene(abbreviation: DMNA),2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene,9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9′-bianthryl,10,10′-diphenyl-9,9′-bianthryl,10,10′-bis(2-phenylphenyl)-9,9′-bianthryl,10,10′-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9′-bianthryl, anthracene,tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, or thelike. Alternatively, pentacene, coronene, or the like may be used. Inthis manner, aromatic hydrocarbon having a hole mobility of 1×10⁻⁶cm²/Vs or higher and 14 to 42 carbon atoms is preferably used.

Note that the aromatic hydrocarbon which can be used for the compositematerial may have a vinyl skeleton. The aromatic hydrocarbon having avinyl group is, for example, 4,4′-bis(2,2-diphenylvinyl)biphenyl(abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene(abbreviation: DPVPA), or the like.

Moreover, a high molecular compound such as poly(N-vinylcarbazole)(abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA),poly[N-(4-{N′-[4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino}phenyl)methacrylamide](abbreviation: PTPDMA), orpoly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (abbreviation:Poly-TPD) can be used.

The hole transport layer is a layer that contains a material with anexcellent hole transport property. The material with an excellent holetransport property is, for example, an aromatic amine compound such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB),N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: TPD), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine(abbreviation: TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine(abbreviation: MTDATA), or4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(abbreviation: BSPB). The materials mentioned here are mainly materialshaving a hole mobility of 10⁻⁶ cm²/Vs or higher. However, materialsother than these materials can also be used, as long as they have moreexcellent hole transport properties than electron transport properties.Note that the layer that contains a material with an excellent holetransport property is not limited to a single layer, and two or morelayers containing any of the aforementioned materials may be stacked.

Further, a high molecular compound such as poly(N-vinylcarbazole)(abbreviation: PVK) or poly(4-vinyltriphenylamine) (abbreviation: PVTPA)can also be used for the hole transport layer.

The light-emitting layer is a layer that contains a light-emittingmaterial. The light-emitting layer may be either a so-calledlight-emitting layer of a single film including an emission centermaterial as its main component or a so-called light-emitting layer of ahost-guest type in which an emission center material is dispersed in ahost material.

There is no limitation on an emission center material used, and a knownmaterial that emits fluorescence or phosphorescence can be used. Afluorescent light-emitting material is, for example,N,N′-bis[4-(9H-carbazol-9-yl)phenyl]-N,N′-diphenylstilbene-4,4′-diamine(abbreviation: YGA2S),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA), or another material having an emission wavelengthof 450 nm or more, such as4-(9H-carbazol-9-yl)-4′-(9,10-diphenyl-2-anthryl)triphenylamine(abbreviation: 2YGAPPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene(abbreviation: TBP),4-(10-phenyl-9-anthryl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBAPA), N,N′-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N′,N′-triphenyl-1,4-phen ylenediamine](abbreviation: DPABPA),N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: 2PCAPPA),N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N′,N-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPPA),N,N,N′,N′V′,N″,N″,N″′-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetramine(abbreviation: DBC1), coumarin 30,N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N′,N-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,N′,N-triphenyl-1,4-phenylenediamine(abbreviation: 2DPABPhA),9,10-bis(1,1′-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine(abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine(abbreviation: DPhAPhA), coumarin 545T, N,N′-diphenylquinacridone(abbreviation: DPQd), rubrene, 5,12-bis(1,1′-biphenyl-4-yl)-6,1-diphenyltetracene (abbreviation: BPT),2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCMI),2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2),N,N,N′,N′-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation:p-mPhTD),7,13-diphenyl-N,N,N′,N′-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD),2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[yj]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTI),2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTB),2-(2,6-bis(2-[4-(dimethylamino)phenyl]ethenyl)-4H-pyran-4-ylidene)propanedinitrile(abbreviation: BisDCM), or2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene})propanedinitrile(abbreviation: BisDCJTM). A phosphorescent light-emitting material is,for example, bis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6) or another materialhaving an emission wavelength of 470 nm to 500 nm, such asbis[2-(4′,6′-difluorophenyl)pyridinato-N,C′]iridium(III) picolinate(abbreviation: FIrpic),bis[2-(3′,5′-bistrifluoromethylphenyl)pyridinato-N,C²′]iridium(III)picolinate (abbreviation: Ir(CF₃ppy)₂(pic)), orbis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]iridium(III)acetylacetonate (abbreviation: FIracac), or another material having anemission wavelength of 500 nm (green light emission) or more, such astris(2-phenylpyridinato)iridium(III) (abbreviation: Ir(ppyh),bis(2-phenylpyridinato)iridium(III) acetylacetonate (abbreviation:Ir(ppy)₂(acac)), tris(acetylacetonato)(monophenanthroline)terbium(III)(abbreviation: Tb(acac)₃(Phen)), bis(benzo[h]quinolinato)iridium(III)acetylacetonate (abbreviation: Ir(bzq)₂(acac)),bis(2,4-diphenyl-1,3-oxazolato-N, C²′)iridium(III) acetylacetonate(abbreviation: Ir(dpo)₂(acac)),bis[2-(4′-perfluorophenylphenyl)pyridinato]iridium(III) acetylacetonate(abbreviation: Ir(p-PF-ph)₂(acac)), bis(2-phenylbenzothiazolato-N,C²′)iridium(III) acetylacetonate (abbreviation: Ir(bt)₂(acac)),bis[2-(2′-benzo[4,5-a]thienyl)pyridinato-N,C³′]iridium(II)acetylacetonate (abbreviation: Ir(btph(acac)),bis(1-phenylisoquinolinato-N,C²′)iridium(III) acetylacetonate(abbreviation: Ir(piq)₂(acac)),(acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III)(abbreviation: Ir(Fdpq)₂(acac)),(acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: Ir(tppr)₂(acac)),(2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphine)platinum(II)(abbreviation: PtOEP),tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III)(abbreviation: Eu(DBM)₃(Phen)), ortris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III)(abbreviation: Eu(TTA)₃(Phen)). The light-emitting material can beselected from the above-mentioned materials or other known materials inconsideration of emission color of each light-emitting element.

In the case of using a host material, the host material is, for example,a metal complex such as tris(8-quinolinolato)aluminum(III)(abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III)(abbreviation: Almq₃), bis(10-hydroxybenzo[h]quinolinato)beryllium(II)(abbreviation: BeBq₂),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)(abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq),bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), orbis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), aheterocyclic compound such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ),2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation: TPBI), bathophenanthroline (abbreviation: BPhen),bathocuproine (abbreviation: BCP), or9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation:COl1), or an aromatic amine compound such as NPB (or α-NPD). TPD, orBSPB. Alternatively, a condensed polycyclic aromatic compound such as ananthracene derivative, a phenanthrene derivative, a pyrene derivative, achrysene derivative, or a dibenzo[g,p]chrysene derivative can be used.Specifically, 9,10-diphenylanthracene (abbreviation: DPAnth),N,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine(abbreviation: DPhPA),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA),N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine(abbreviation: PCAPBA),N,9-diphenyl-N-(9,10-diphenyl-2-anthryl)-9H-carbazol-3-amine(abbreviation: 2PCAPA), 6,12-dimethoxy-5,11-diphenylchrysene,N,N,N,N′,N′,N″,N″,N″′-octaphenyldibenzo[gp]chrysene-2,7,10,15-tetramine(abbreviation: DBCl), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole(abbreviation: CzPA),3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole(abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene(abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA),2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA),9,9′-bianthryl (abbreviation: BANT),9,9′-(stilbene-3,3′-diyl)diphenanthrene (abbreviation: DPNS),9,9′-(stilbene-4,4′-diyl)diphenanthrene (abbreviation: DPNS2),3,3′,3″-(benzene-1,3,5-triyl)tripyrene (abbreviation: TPB3), or the likecan be used. From these materials or other known materials, a materialmay be selected which has a larger energy gap (or a triplet energy ifthe material emits phosphorescence) than an emission center materialdispersed in the material and which has a transport property as needed.

The electron transport layer is a layer that contains a material with anexcellent electron transport property. For example, the electrontransport layer is a layer including a metal complex or the like havinga quinoline or benzoquinoline skeleton, such astris(8-quinolinolato)aluminum (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq₂), orbis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation:BAlq). Alternatively, a metal complex having an oxazole-based orthiazole-based ligand, such as bis[2-(2-hydroxyphenyl)benzoxazolato]zinc(abbreviation: Zn(BOX)₂) or bis[2-(2-hydroxyphenyl)benzothiazolato]zinc(abbreviation: Zn(BTZ)₂), can be used. Besides the metal complexes,2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen),bathocuproine (abbreviation: BCP), or the like can also be used. Thematerials mentioned here are mainly materials having an electronmobility of 10⁻⁶ cm²/Vs or higher. Note that the electron transportlayer may be formed using materials other than those mentioned above aslong as the materials have more excellent electron transport propertiesthan hole transport properties.

Furthermore, the electron transport layer is not limited to a singlelayer, and two or more layers which are each formed from theaforementioned material may be stacked.

In addition, a layer for controlling the movement of electron carriersmay be provided between the electron transport layer and thelight-emitting layer. The layer for controlling the movement of electroncarriers is a layer formed by adding a small amount of material with anexcellent electron trap property to a material with an excellentelectron transport property as mentioned above, and carrier balance canbe adjusted by controlling the movement of electron carriers. Such astructure has a great effect on reducing problems (for example, areduction in element lifetime) which may be caused by electrons passingthrough the light-emitting layer.

Furthermore, the electron injection layer may be provided in contactwith a cathode, the other of the electrode 111 and the electrode 113.The electron injection layer may be formed using an alkali metal, analkaline earth metal, or a compound thereof, such as lithium fluoride(LiF), cesium fluoride (CsF), or calcium fluoride (CaF₂). For example, alayer formed from a material with an electron transport property, whichcontains an alkali metal, an alkaline earth metal, or a compoundthereof, (for example, a layer that contains magnesium (Mg) in Alq), canbe used. Note that the electron injection layer is preferably a layerformed from a material with an electron transport property, whichcontains an alkali metal or an alkaline earth metal, because electronscan be efficiently injected from the cathode.

When the electrode 113 is used as a cathode, a metal, an alloy, anelectrically conductive compound, a mixture thereof, or the like with alow work function (specifically, 3.8 eV or less) can be used. Specificexamples of such a cathode material are as follows: an element thatbelongs to Group 1 or Group 2 of the periodic table, i.e., an alkalimetal such as lithium (Li) or cesium (Cs), an alkaline earth metal suchas magnesium (Mg), calcium (Ca), or strontium (Sr), an alloy containingthese (such as MgAg or AlLi), a rare earth metal such as europium (Eu)or ytterbium (Yb), an alloy containing these, and the like. Note thatwhen an electron injection layer is provided between the cathode and theelectron transport layer, the cathode can be formed using any of avariety of conductive materials such as Al, Ag, ITO, or indium oxide-tinoxide containing silicon or silicon oxide, regardless of its workfunction. Films of these conductive materials can be formed by asputtering method, an inkjet method, a spin coating method, or the like.

When the electrode 113 is used as an anode, a metal, an alloy, aconductive compound, a mixture thereof, or the like with a high workfunction (specifically, 4.0 eV or more) is preferably used. Specificexamples are as follows: indium tin oxide (ITO), indium tin oxidecontaining silicon or silicon oxide, indium zinc oxide (IZO), indiumoxide containing tungsten oxide and zinc oxide, and the like. Films ofthese conductive metal oxides are usually formed by sputtering; however,a sol-gel method or the like may also be used. For example, a film ofindium zinc oxide (IZO) can be formed by a sputtering method using atarget in which zinc oxide is added to indium oxide at 1 wt % to 20 wt%. A film of indium oxide containing tungsten oxide and zinc oxide canbe formed by a sputtering method using a target in which tungsten oxideand zinc oxide are added to indium oxide at 0.5 wt % to 5 wt % and 0.1wt % to 1 wt %, respectively. Furthermore, gold (Au), platinum (Pt),nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe),cobalt (Co), copper (Cu), palladium (Pd), a nitride of a metal material(such as titanium nitride), or the like can be used. By providing any ofthe above-mentioned composite materials in contact with the anode, anelectrode material can be selected regardless of its work function.

Next, as illustrated in FIG. 4B, by irradiation with a laser beam 134,for example, a UV laser beam, an opening 135 is formed in the separationlayer 132 and the base film 102 as illustrated in FIG. 5A. In addition,before the irradiation with the laser beam 134, a resin for separationmay be provided to cover a stacked body that is formed over thesubstrate 131.

Part of the separation layer 132 is removed by formation of the opening135, which enables a stacked structure body 137 including the base film102, the electrode 111, the spacer 105, the spacer 106, the partition104 a, the partition 104 b, the light-emitting layer 112, and theelectrode 113 to be easily separated from the substrate 131. Thisseparation occurs inside the separation layer 132 or at the interfacebetween the separation layer 132 and the base film 102.

Although a UV laser beam is used as the laser beam 134 in thisembodiment, there is no particular limitation on the kind of the laserbeam 134 as long as the opening 135 can be formed.

A laser which emits the laser beam 134 includes a laser medium, anexcitation source, and a resonator. Lasers can be classified accordingto their media into gas lasers, liquid lasers, and solid-state lasersand can be classified according to their oscillation characteristicsinto free electron lasers, semiconductor lasers, and x-ray lasers. Inthis embodiment, any of these lasers may be used. Note that a gas laseror a solid-state laser is preferably used, and a solid-state laser ismore preferably used.

Examples of gas lasers include a helium-neon laser, a carbon dioxide gaslaser, an excimer laser, and an argon ion laser. Examples of an excimerlaser include a rare gas excimer laser and a rare gas halide excimerlaser. A rare gas excimer laser oscillates with three kinds of excitedmolecules of argon, krypton, and xenon. Examples of an argon ion laserinclude a rare gas ion laser and a metal vapor ion laser.

Examples of a liquid laser include an inorganic liquid laser, an organicchelate laser, and a dye laser. In an inorganic liquid laser and anorganic chelate laser, rare earth ions of neodymium or the like, whichare utilized in a solid-state laser, are used as a laser medium.

A laser medium used in a solid-state laser is a solid base doped withactive species functioning as a laser. The solid base is a crystal orglass. A crystal is YAG (yttrium aluminum garnet crystal), YLF, YVO₄,YAlO₃, sapphire, ruby, or alexandrite. Active species functioning as alaser are, for example, trivalent ions (such as Cr³⁺, Nd³⁺, Yb³⁺, Tm³⁺,Ho³⁺, Er³⁺, and Ti³⁺).

When ceramic (polycrystal) is used as the laser medium, the medium canbe formed into any desired shape in a short amount of time at low cost.In the case of using a single crystal, a columnar medium having adiameter of several millimeters and a length of several tens ofmillimeters is generally used; in the case of using ceramic(polycrystal), a medium larger than that can be formed. Theconcentration of a dopant such as Nd or Yb in a medium which directlycontributes to light emission cannot be changed largely either in asingle crystal or in a polycrystal. Therefore, there is limitation tosome extent on improvement of laser output by increasing theconcentration. However, in the case of using ceramic as the medium, adrastic improvement of output can be achieved because the size of themedium can be significantly increased compared to that of a singlecrystal. Furthermore, in the case of using ceramic, a medium having aparallelepiped shape or a rectangular solid shape can be easily formed.When a medium having such a shape is used and emitted light is made topropagate inside the medium in zigzag, the optical path of emitted lightcan be extended. Therefore, the amplitude is increased and a laser beamcan be oscillated with high output. In addition, because a laser beamemitted from a medium having such a shape has a quadrangularcross-sectional shape at the time of emission, it is advantageous over acircular beam in being shaped into a linear beam. By shaping the laserbeam emitted as described above through an optical system, a linear beamhaving a length of 1 mm or less on a shorter side and a length ofseveral millimeters to several meters on a longer side can be easilyobtained. Further, by uniformly irradiating the medium with excitedlight, the linear beam has a uniform energy distribution in alonger-side direction. By irradiating a semiconductor film with thislinear beam, the entire surface of the semiconductor film can beannealed uniformly. When uniform annealing with the linear beam from oneend to the other end is needed, a device of providing a slit at both ofthe ends so as to block an energy attenuated portion of the beam isnecessary.

Note that a continuous-wave (CW) laser beam or a pulsed laser beam canbe used as the laser beam 134 in this embodiment. The conditions forirradiation with the laser beam 134, such as frequency, power density,energy density, or beam profile, are controlled as appropriate inconsideration of the thicknesses, the materials, or the like of the basefilm 102 and the separation layer 132.

Next, the stacked structure body 137 including the base film 102, theelectrode 111, the spacer 105, the spacer 106, the partition 104 a, thepartition 104 b, the light-emitting layer 112, and the electrode 113 isseparated from the substrate 131 (see FIG. 5B).

In addition, an insulating film 142 and an adhesive layer 143 are formedover a substrate 141 (see FIG. 6A). Note that the insulating film 142may be formed as necessary and does not need to be formed if notnecessary.

The substrate 141 is flexible and has a light-transmitting property. Assuch a substrate, a plastic substrate which has a light-transmittingproperty, or the like may be used. For example, a polyester resin suchas polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), apolyacrylonitrile resin, a polyimide resin, a polymethyl methacrylateresin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, apolyamide resin, a cycloolefin resin, a polystyrene resin, a polyamideimide resin, a polyvinylchloride resin, or the like can be used asappropriate.

For the insulating film 142, any of the materials mentioned in thedescription of the base film 102 may be used.

For the adhesive layer 143, any of a variety of types of curableadhesives, e.g., a photocurable adhesive such as a UV curable adhesive,a reactive curable adhesive, a thermosetting adhesive, and an anaerobicadhesive, can be used. As examples of materials of such adhesives, anepoxy resin, an acrylic resin, a silicone resin, a phenol resin, and thelike can be given.

Next, the base film 102 included in the stacked structure body 137 andthe adhesive layer 143 over the substrate 141 are disposed to face eachother and attached to each other (see FIG. 6B).

In the aforementioned manner, a light-emitting element 145 ismanufactured over a flexible substrate (see FIG. 6C).

Next, a semiconductor circuit for driving a light-emitting element and amethod for manufacturing the semiconductor circuit are hereinafterdescribed with reference to FIGS. 7A to 7D, FIGS. 8A to 8C, FIGS. 9A to9C, FIGS. 10A and 10B, FIG. 11, FIG. 12, FIGS. 14A and 14B, FIG. 15,FIG. 16, FIGS. 17A and 17B, FIGS. 18A and 18B, FIG. 19, FIG. 20, FIG.21, and FIGS. 23A and 23B.

First, a separation layer 222 and a base film 204 are formed over asubstrate 221 (see FIG. 7A). The substrate 221, the separation layer222, and the base film 204 may be formed using any of the respectivematerials mentioned in the description of the substrate 131, theseparation layer 132, and the base film 102.

Next, an island-like semiconductor film 231 is formed over the base film204; a gate insulating film 205 is formed to cover the base film 204 andthe island-like semiconductor film 231; and a gate electrode 236 isformed over the island-like semiconductor film 231 with the gateinsulating film 205 interposed therebetween (see FIG. 7B).

The island-like semiconductor film 231 can be formed using any of thefollowing materials: an amorphous semiconductor manufactured by asputtering method or a vapor-phase growth method using a gas including asemiconductor material typified by silicon (Si) or germanium (Ge); apolycrystalline semiconductor formed by crystallizing the amorphoussemiconductor with the use of optical energy or thermal energy; amicrocrystalline (also referred to as semi-amorphous or microcrystal)semiconductor; a semiconductor containing an organic material as itsmain component; and the like. The island-like semiconductor film 231 maybe formed by forming a semiconductor film by a sputtering method, anLPCVD method, a plasma CVD method, or the like and then etching thesemiconductor film into an island-like shape. In this embodiment, anisland-like silicon film is formed as the island-like semiconductor film231.

As a material of the island-like semiconductor film 231, as well as anelement such as silicon (Si) or germanium (Ge), a compound semiconductorsuch as GaAs, InP, SiC, ZnSe, GaN, or SiGe can be used. Alternatively,an oxide semiconductor such as zinc oxide (ZnO), tin oxide (SnO₂),magnesium zinc oxide, gallium oxide, or indium oxide, an oxidesemiconductor including two or more of the above oxide semiconductors,or the like can be used. For example, an oxide semiconductor includingzinc oxide, indium oxide, and gallium oxide can also be used. In thecase of using zinc oxide for the island-like semiconductor film 231, thegate insulating film 205 may be formed using Y₂O₃, Al₂O₃, or TiO₂, astacked layer thereof, or the like, and the gate electrode 236 and anelectrode 215 a and an electrode 215 b which are to be described belowmay be formed using ITO, Au, Ti, or the like. In addition, In, Ga, orthe like can be added to ZnO.

The gate electrode 236 may be formed by a CVD method, a sputteringmethod, a droplet discharge method, or the like using an elementselected from Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh. W, Al, Ta, Mo, Cd, Zn, Fe,Ti, Si, Ge, Zr, and Ba or an alloy material or a compound materialcontaining any of the elements as its main component. In addition, asemiconductor film typified by a polycrystalline silicon film doped withan impurity element such as phosphorus, or an AgPdCu alloy may be used.Further, either a single layer structure or a stacked structure of aplurality of layers may be employed.

In addition, a channel formation region 233, a region 234 a which is oneof a source region and a drain region, and a region 234 b which is theother of the source region and the drain region are formed in theisland-like semiconductor film 231 (see FIG. 7C). The region 234 a andthe region 234 b may be formed by adding an impurity element having oneconductivity type to the island-like semiconductor film 231 with thegate electrode 236 used as a mask. As the impurity element having oneconductivity type, phosphorus (P) or arsenic (As) which is an impurityelement imparting n-type conductivity or boron (B) which is an impurityelement imparting p-type conductivity may be used.

A low-concentration impurity region may be formed in each of regionsbetween the channel formation region 233 and the region 234 a andbetween the channel formation region 233 and the region 234 b.

Next, an insulating film 206 and an insulating film 207 are formed tocover the gate insulating film 205 and the gate electrode 236.Furthermore, an electrode 215 a which is electrically connected to theregion 234 a and an electrode 215 b which is electrically connected tothe region 234 b are formed over the insulating film 207. In theaforementioned manner, a TFT 211 which is included in a semiconductorcircuit is manufactured (see FIG. 7D). Note that although a single TFTis illustrated in FIG. 7D, two or more TFTs may be provided. Asemiconductor circuit may be formed with a plurality of TFTs that areelectrically connected to each other.

The insulating film 206 and the insulating film 207 may each be formedusing any of the materials mentioned in the description of the base film204. In this embodiment, a silicon nitride film containing oxygen isformed as the insulating film 206, and a silicon oxide film containingnitrogen is formed as the insulating film 207. This is in order toterminate dangling bonds in the island-like semiconductor film 231 withhydrogen contained in the silicon nitride film containing oxygen throughheat treatment. Alternatively, either the insulating film 206 or theinsulating film 207 may be formed as necessary.

The electrode 215 a and the electrode 215 b may be formed using any ofthe materials mentioned in the description of the gate electrode 236.

Next, an insulating film 208 is formed to cover the insulating film 207,the electrode 215 a, and the electrode 215 b, and an electrode 217 whichis electrically connected to one of the electrode 215 a and theelectrode 215 b is formed over the insulating film 208 (see FIG. 8A).

The insulating film 208 may be formed using an organic insulatingmaterial or an inorganic insulating material.

As an inorganic material, silicon oxide, silicon nitride, silicon oxidecontaining nitrogen, or diamond-like carbon (DLC) or a stacked structureof two or more of these materials can be used. As an organic material,polyimide, acrylic, polyamide, polyimide amide, resist,benzocyclobutene, or siloxane or a stacked structure of two or more ofthese materials may be used.

The electrode 217 may be formed using any of the materials mentioned inthe description of the gate electrode 236.

A structure body 305 in which a sheet-like fibrous body 302 isimpregnated with an organic resin 301 is provided over the insulatingfilm 208 and the electrode 217 (see FIG. 8B). Such a structure body 305is also called a prepreg. A prepreg is specifically formed in thefollowing manner: after a sheet-like fibrous body is impregnated with acomposition in which a matrix resin is diluted with an organic solvent,drying is performed so that the organic solvent is volatilized and thematrix resin is semi-cured.

In the drawings of this specification, the sheet-like fibrous body 302is illustrated as a woven fabric which is plain-woven using yarn bundleswith an elliptical cross-sectional shape. Although the size of the TFT211 is larger than the width of a yarn bundle of the sheet-like fibrousbody 302, the size of the TFT 211 may be smaller than the width of ayarn bundle of the sheet-like fibrous body 302 in some cases.

The structure body (also called “prepreg”) 305 including the sheet-likefibrous body 302 and the organic resin 301 is hereinafter described indetail with reference to FIGS. 14A and 14B, FIG. 15, FIG. 16, and FIGS.17A and 17B.

A top view of a woven fabric which is the sheet-like fibrous body 302woven using yarn bundles as warp yarns and weft yarns is illustrated inFIGS. 14A and 14B, and a cross-sectional view thereof is illustrated inFIG. 17A. In addition, a cross-sectional view of the structure body 305in which the sheet-like fibrous body 302 is impregnated with the organicresin 301 is illustrated in FIG. 17B.

The sheet-like fibrous body 302 is a woven fabric or a nonwoven fabricof an organic compound or an inorganic compound. Alternatively, as thesheet-like fibrous body 302, a high-strength fiber of an organiccompound or an inorganic compound may be used.

Alternatively, the sheet-like fibrous body 302 may be a woven fabricwhich is woven using bundles of fibers (single yarns) (hereinafter, thebundles of fibers are referred to as yarn bundles) for warp yarns andweft yarns, or a nonwoven fabric obtained by stacking yarn bundles ofplural kinds of fibers in a random manner or in one direction. In thecase of a woven fabric, a plain-woven fabric, a twilled fabric, asatin-woven fabric, or the like can be used as appropriate.

The yarn bundle may have a circular cross-sectional shape or anelliptical cross-sectional shape. As the yarn bundle, a yarn bundle maybe used which has been subjected to fiber opening with a high-pressurewater stream, high-frequency vibration using liquid as a medium,continuous ultrasonic vibration, pressing with a roller, or the like. Ayarn bundle which has been subjected to fabric opening has a largerwidth, has a smaller number of single yarns in the thickness direction,and has an elliptical cross-sectional shape or a flat cross-sectionalshape. Furthermore, by using a loosely twisted yarn as the yarn bundle,the yarn bundle is easily flattened and has an ellipticalcross-sectional shape or a flat cross-sectional shape. By using yarnbundles having an elliptical cross-sectional shape or a flatcross-sectional shape as described above, it is possible to reduce thethickness of the sheet-like fibrous body 302. Accordingly, the structurebody 305 can be made thin, and thus, a thin semiconductor device can bemanufactured.

As illustrated in FIG. 14A, the sheet-like fibrous body 302 is wovenusing warp yarns 302 a spaced at regular intervals and weft yarns 302 bspaced at regular intervals. Such a fibrous body has regions without thewarp yarns 302 a and the weft yarns 302 b (referred to as basket holes302 c). Such a sheet-like fibrous body 302 is further impregnated withthe organic resin 301, whereby adhesiveness of the sheet-like fibrousbody 302 can be further increased. Note that although neither the warpyarns 302 a nor the weft yarns 302 b exist in the basket holes 302 c ofthe structure body 305, the basket holes 302 c are filled with theorganic resin 301.

As illustrated in FIG. 14B, in the sheet-like fibrous body 302, thedensity of the warp yarns 302 a and the weft yarns 302 b may be high andthe proportion of the basket holes 302 c may be low. Typically, the sizeof the basket hole 302 c is preferably smaller than the area of alocally pressed portion. More typically, the basket hole 302 cpreferably has a rectangular shape having a side with a length of 0.01mm to 0.2 mm. When the basket hole 302 c of the sheet-like fibrous body302 has such a small area, even when pressure is applied by a memberwith a sharp tip (typically, a writing instrument such as a pen or apencil), the pressure can be absorbed by the entire sheet-like fibrousbody 302.

Furthermore, in order to enhance the permeability of the organic resin301 into the inside of the yarn bundles, the yarn bundles may besubjected to surface treatment. For example, as the surface treatment,corona discharge treatment, plasma discharge treatment, or the like foractivating a surface of the yarn bundle can be given. Moreover, surfacetreatment using a silane coupling agent or a titanate coupling agent canbe given.

A high-strength fiber is specifically a fiber with a high tensilemodulus of elasticity or a fiber with a high Young's modulus. As typicalexamples of a high-strength fiber, a polyvinyl alcohol fiber, apolyester fiber, a polyamide fiber, a polyethylene fiber, an aramidfiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and acarbon fiber can be given. As the glass fiber, a glass fiber using Eglass, S glass, D glass, Q glass, or the like can be used. Note that thesheet-like fibrous body 302 may be formed from one or more kinds of theabove-mentioned high-strength fibers.

As the organic resin 301 with which the sheet-like fibrous body 302 isimpregnated, a thermosetting resin such as an epoxy resin, anunsaturated polyester resin, a polyimide resin, a bismaleimide-triazineresin, or a cyanate resin can be used. Alternatively, a thermoplasticresin such as a polyphenylene oxide resin, a polyetherimide resin, or afluorine resin may be used. Further alternatively, a plurality of theabove-mentioned thermosetting resins and thermoplastic resins may beused. By using the above-mentioned organic resin, the sheet-like fibrousbody can be fixed to a semiconductor element layer by heat treatment.The higher the glass transition temperature of the organic resin 301 is,the less easily the organic resin 301 is damaged by local pressure;thus, the organic resin 301 preferably has high glass transitiontemperature.

Highly thermally conductive filler may be dispersed in the organic resin301 or in yarn bundles of a fiber. Examples of the highly thermallyconductive filler include aluminum nitride, boron nitride, siliconnitride, alumina, and metal particles of silver, copper, or the like.When the highly thermally conductive filler is included in the organicresin or the yarn bundles, heat generated in an element layer can beeasily released to the outside. Accordingly, thermal storage in asemiconductor device can be suppressed, and damage to the semiconductordevice can be reduced.

Note that FIGS. 14A and 14B illustrate a sheet-like fibrous body wovenusing alternate warp and weft yarns. However, the number of warp yarnsand that of weft yarns are not limited to these. The number of warpyarns and that of weft yarns may be determined as needed. For example,FIG. 15 is a top view of a sheet-like fibrous body woven using warpyarns and weft yarns each including ten yarns, and FIG. 16 illustrates across-sectional view thereof. In FIG. 15, the sheet-like fibrous body302 is impregnated with the organic resin 301 to form the structure body305.

Next, a conductive resin 306 is disposed over the structure body 305 andover the electrode 217 (see FIG. 8C). In this embodiment, a conductivepaste including a metal element, for example, silver paste, is used asthe conductive resin 306. The metal element may be included in theconductive paste as metal particles.

The conductive paste may be any paste that includes copper (Cu), silver(Ag), nickel (Ni), gold (Au), platinum (Pt), palladium (Pd), tantalum(Ta), molybdenum (Mo), or titanium (Ti).

As a method for disposing the conductive resin 306 over the structurebody 305, a screen printing method or an inkjet method may be employed.

When the conductive resin 306 is disposed over the structure body 305,the organic resin 301 in the structure body 305 reacts with a componentof the conductive resin 306 and, for example, in the case of using aconductive paste, the organic resin 301 reacts with the paste. Thus,part of the organic resin 301 is dissolved and metal particles in theconductive resin 306 pass through interstices in the sheet-like fibrousbody 302 and move to a surface (a second surface) opposite to thesurface over which the conductive resin 306 is disposed first (a firstsurface). Accordingly, a through electrode is formed in the structurebody 305 (see FIG. 9A).

Note that the area of the conductive resin 306 on the second surface ofthe structure body 305 may be smaller or larger than the area on thefirst surface. That is, the conductive resin 306 may contract or expandwhile moving in the structure body 305.

Because a through hole (also referred to as a contact hole) is notformed in the structure body 305, that is, because the sheet-likefibrous body 302 is not divided, one surface of the structure body 305can be electrically connected to the other surface without reducing thestrength of the structure body 305.

After that, a heating step and a pressure bonding step are performed tocure an undissolved portion of the organic resin 301 in the structurebody 305.

A stacked structure from the substrate 221 to the structure body 305 andthe conductive resin 306 are herein referred to as a stacked structurebody 237.

Next, in order to facilitate a later separation step, the stackedstructure from the separation layer 222 to the structure body 305 may beirradiated with a laser beam 225 from the structure body 305 side asillustrated in FIG. 9B to form a groove 227 in the stacked structureincluding the separation layer 222, the base film 204, the gateinsulating film 205, the insulating film 206, the insulating film 207,the insulating film 208, and the structure body 305 as illustrated inFIG. 9C. The laser beam 225 may be any of the laser beams mentioned inthe description of the laser beam 134.

Next, using the groove 227 as a trigger, the substrate 221 provided withthe separation layer 222 is separated from a stacked structure body 232including the base film 204, the gate insulating film 205, theinsulating film 206, the insulating film 207, the insulating film 208,the structure body 305, and the TFT 211, at the interface between theseparation layer 222 and the base film 204 by a physical means (see FIG.10A).

The physical means refers to a dynamic means or a mechanical means,which applies some dynamical energy (mechanical energy). Typically, thephysical means is an action of applying mechanical force (e.g., apeeling process with human hands or with a gripper, or a separationprocess with a rotating roller). At this time, when an adhesive sheetwhich can be separated by light or heat is provided over a surface ofthe structure body 305, separation can be performed more easily.

Alternatively, the stacked structure body 232 may be separated from theseparation layer 222 by dropping a liquid into the groove 227 to allowthe liquid to be infiltrated into the interface between the separationlayer 222 and the base film 204. In this case, a liquid may be droppedonly into the groove 227, or the stacked structure manufactured over thesubstrate 221 may be entirely soaked in a liquid so that the liquid isinfiltrated from the groove 227 into the interface between theseparation layer 222 and the base film 204.

Alternatively, in FIG. 9C, a method can be employed in which a fluoridegas such as NF₃, BrF₃, or ClF₃ is introduced into the groove 227 and theseparation layer 222 is removed by etching with the use of the fluoridegas so that the stacked structure body 232 is separated from thesubstrate 221.

In addition, a substrate 201 provided with an insulating film 202 and anadhesive layer 203 is prepared, and then, the base film 204 included inthe stacked structure body 232 and the adhesive layer 203 over thesubstrate 201 are disposed to face each other and attached to eachother. The substrate 201, the insulating film 202, and the adhesivelayer 203 may be formed using the respective materials mentioned in thedescription of the substrate 141, the insulating film 142, and theadhesive layer 143. In the manner mentioned above, a semiconductorcircuit element 235 is manufactured (see FIG. 10B).

Next, the light-emitting element 145 and the semiconductor circuitelement 235 are disposed to face each other (see FIG. 1). At this time,these elements are disposed to face each other such that the projectingportion of the electrode 113 and the conductive resin 306 overlap eachother.

A case where the projecting portion of the electrode 113 and theconductive resin 306 are directly bonded to each other is illustrated inFIG. 11. Before the direct bonding, surfaces of the light-emittingelement 145 and the semiconductor circuit element 235 are preferablysubjected to plasma treatment. In addition, when electric current isapplied between the electrode 113 and the conductive resin 306, thebonding is strengthened.

In addition, a space 241 surrounded by the electrode 113, the partition104 a, and the structure body 305 is generated, and in the case where adesiccant 242 is provided in the space 241, the entry of moisture intothe light-emitting layer 112 can be prevented.

Furthermore, because the space 241 exists, stress can be relaxed evenwhen the substrate 141 and the substrate 201 are bent.

An example in which the light-emitting element 145 and the semiconductorcircuit element 235 are attached to each other with an anisotropicconductive resin film 331 is illustrated in FIG. 12. As the anisotropicconductive resin film 331, an anisotropic conductive paste (ACP), ananisotropic conductive film (ACF), and the like can be given asexamples. By attaching the light-emitting element 145 and thesemiconductor circuit element 235 to each other with the anisotropicconductive resin film 331, the projecting portion of the electrode 113and the conductive resin 306 are electrically connected to each otherthrough conductive particles 332 which are contained in the anisotropicconductive resin film 331. Because the anisotropic conductive resin film331 conducts electricity only in a longitudinal direction, only aportion between the projecting portion of the electrode 113 and theconductive resin 306 conducts electricity.

Alternatively, the light-emitting element 145 and the semiconductorcircuit element 235 may be attached to each other with a non-conductivepaste (NCP).

A semiconductor circuit element having a structure different from thatin FIG. 10B and a method for manufacturing the semiconductor circuitelement, and a light-emitting device and a method for manufacturing thelight-emitting device are described with reference to FIGS. 18A and 18B,FIG. 19, FIG. 20, and FIG. 21.

First, based on the manufacturing steps to FIG. 8B, a separation layer222, a base film 204, a gate insulating film 205, an insulating film206, an insulating film 207, an insulating film 208, a TFT 261 includingan electrode 262 and an electrode 263, and a structure body 305including a sheet-like fibrous body 302 and an organic resin 301 areformed over a substrate 221.

At this time, the TFT 261 may be formed in a manner similar to the TFT211, and the electrode 262 and the electrode 263 are formed in place ofthe electrode 215 a and the electrode 215 b, respectively. Contact holesare formed in the gate insulating film 205, the insulating film 206, theinsulating film 207, and the insulating film 208 to reach a region 234 band the separation layer 222, and one of the electrodes 262 and 263,which is the electrode 263 in this embodiment, is formed in contact withthe region 234 b and the separation layer 222.

Next, based on the manufacturing steps illustrated in FIGS. 9B and 9C, agroove 227 is formed in a stacked structure including the gateinsulating film 205, the insulating film 206, the insulating film 207,the insulating film 208, and the structure body 305 (see FIG. 18A).

Next, using the groove 227 as a trigger, the substrate 221 provided withthe separation layer 222 is separated from a semiconductor circuitelement 245 including the base film 204, the gate insulating film 205,the insulating film 206, the insulating film 207, the insulating film208, the structure body 305, and the TFT 261, at the interface betweenthe separation layer 222 and the base film 204 (see FIG. 18B).Accordingly, the electrode 263 is exposed at a surface of the base film204.

Next, the base film 204 of the semiconductor circuit element 245 and theelectrode 113 of the light-emitting element are disposed to face eachother (see FIG. 19). At this time, the projecting portion of theelectrode 113 and the electrode 263 exposed at the surface of the basefilm 204 are arranged to overlap each other.

A case where the projecting portion of the electrode 113 and theelectrode 263 are directly bonded to each other is illustrated in FIG.20. Before the direct bonding, surfaces of the light-emitting element145 and the semiconductor circuit element 245 are preferably subjectedto plasma treatment. In addition, when electric current is appliedbetween the electrode 113 and the electrode 263, the bonding isstrengthened.

In addition, a space 247 surrounded by the electrode 113, the partition104 a, and the base film 204 is generated, and in the case where adesiccant 242 is provided in the space 247, the entry of moisture intothe light-emitting layer 112 can be prevented.

An example in which the light-emitting element 145 and the semiconductorcircuit element 245 are attached to each other with an anisotropicconductive resin film 331 is illustrated in FIG. 21. By attaching thelight-emitting element 145 and the semiconductor circuit element 245 toeach other with the anisotropic conductive resin film 331, theprojecting portion of the electrode 113 and the electrode 217 areelectrically connected to each other through conductive particles 332which are contained in the anisotropic conductive resin film 331.Because the anisotropic conductive resin film 331 conducts electricityonly in a longitudinal direction, only a portion between the projectingportion of the electrode 113 and the electrode 263 conducts electricity.

Alternatively, the light-emitting element 145 and the semiconductorcircuit element 245 may be attached to each other with a non-conductivepaste (NCP).

A semiconductor circuit element having a structure different from thatin FIG. 10B and a method for manufacturing the semiconductor circuitelement, and a light-emitting device and a method for manufacturing thelight-emitting device are described with reference to FIGS. 23A and 23Band FIGS. 24A and 24B.

First, based on the manufacturing steps to FIG. 8B, a separation layer222, a base film 204, a gate insulating film 205, an insulating film206, an insulating film 207, an electrode 217, an insulating film 208,and a TFT 211 including an electrode 215 a and an electrode 215 b areformed over a substrate 221.

A resin layer 251 and a support 252 are formed over the insulating film208 and the electrode 217 (see FIG. 23A). In this embodiment, awater-soluble resin is used as the resin layer 251, and UV tape is usedas the support 252. Before the resin layer 251 and the support 252 areformed, a groove may be formed by laser beam irradiation in a mannersimilar to the manufacturing step illustrated in FIG. 9B.

Next, the substrate 221 provided with the separation layer 222 isseparated from a semiconductor circuit element 255 including the basefilm 204, the gate insulating film 205, the insulating film 206, theinsulating film 207, the insulating film 208, the TFT 211, and theelectrode 217, at the interface between the separation layer 222 and thebase film 204. Then, the semiconductor circuit element 255 and asubstrate 201 provided with an insulating film 202 and an adhesive layer203 are attached to each other with the adhesive layer 203 (see FIG.23B).

Next, the resin layer 251 is dissolved and removed to separate thesupport 252. For the resin layer 251, another soluble resin, plasticresin, or the like may be used, and the semiconductor circuit element255 and the support 252 may be chemically or physically separated fromeach other (see FIG. 24A).

A light-emitting element 145 is manufactured based on the manufacturingsteps illustrated in FIG. 1, FIGS. 2A to 2C, FIGS. 3A and 3B, FIGS. 4Aand 4B, FIGS. 5A and 5B, and FIGS. 6A to 6C, and the projecting portionof the electrode 113 of the light-emitting element 145 and the electrode217 of the semiconductor circuit element 255 are directly bonded(connected) to each other (see FIG. 24B).

Before the projecting portion of the electrode 113 and the electrode 217are directly bonded to each other, surfaces of the light-emittingelement 145 and the semiconductor circuit element 255 are preferablysubjected to plasma treatment. In addition, when electric current isapplied between the electrode 113 and the electrode 217, the bonding isstrengthened.

In addition, a space 241 surrounded by the electrode 113, the partition104 a, and the structure body 305 is generated, and in the case where adesiccant 242 is provided in the space 241, the entry of moisture intothe light-emitting layer 112 can be prevented.

Furthermore, because the space 241 exists, stress can be relaxed evenwhen the substrate 141 and the substrate 201 are bent.

In a manner similar to the structure illustrated in FIG. 12, thelight-emitting element 145 and the semiconductor circuit element 255 maybe attached to each other with an anisotropic conductive resin film 331containing conductive particles 332, and the projecting portion of theelectrode 113 and the conductive resin 306 may be electrically connectedto each other.

Alternatively, the light-emitting element 145 and the semiconductorcircuit element 255 may be attached to each other with a non-conductivepaste (NCP).

Through the above steps, a light-emitting device including alight-emitting element and a semiconductor circuit element ismanufactured. By manufacturing the light-emitting element and thesemiconductor circuit element over different substrates and thenattaching the elements to each other, a semiconductor circuit is notformed below the light-emitting element and thus the generation ofdefective coverage due to steps can be suppressed.

In addition, because the light-emitting element and the semiconductorcircuit element for driving the light-emitting element can be disposedover flexible substrates, the shape can be changed and thelight-emitting element and the semiconductor circuit element for drivingthe light-emitting element can be incorporated into electronic devicesof various shapes even after the light-emitting element and thesemiconductor circuit element are attached to each other.

Embodiment 2

In this embodiment, a cellular phone incorporating the light-emittingdevice described in Embodiment 1 is described with reference to FIGS.13A to 13D, FIGS. 22A and 22B, FIG. 25. FIG. 26, FIGS. 27A to 27D, andFIGS. 28A and 28B. In this embodiment, the same elements are denoted bythe same reference numerals.

FIG. 13C is a front view of the cellular phone; FIG. 13D, a side view;FIG. 13B, a top view; and FIG. 13A, a cross-sectional view of a housing411. The shape of the front of the housing 411 is a rectangle havinglonger sides and shorter sides, which may have round corners. In thisembodiment, a direction parallel to the longer sides of the rectanglethat is the shape of the front is referred to as a longitudinaldirection, and a direction parallel to the shorter sides is referred toas a lateral direction.

In addition, the shape of the side of the housing 411 is also arectangle having longer sides and shorter sides, which may have roundcorners. In this embodiment, a direction parallel to the longer sides ofthe rectangle that is the shape of the side is a longitudinal direction,and a direction parallel to the shorter sides is referred to as a depthdirection.

The cellular phone illustrated in FIGS. 13A to 13D has the housing 411,a housing 402, and a display region 413, operation buttons 404, an ELpanel 421, a touch panel 423, and a support 416 which are incorporatedin the housing 411.

The EL panel 421 and a driver circuit 412 which is mentioned below maybe formed using the light-emitting device including the light-emittingelement and the semiconductor circuit element, which is described inEmbodiment 1. In the EL panel 421, the light-emitting element is usedand the semiconductor circuit element is used as a pixel circuit fordriving the light-emitting element. The driver circuit 412 for drivingthe pixel circuit may be manufactured using a semiconductor circuitelement.

Note that FIG. 28A is a perspective view of the housing 411. A region ofthe housing 411 which has the largest area is a front 455; a surfaceopposite to the front 455 is a back 452; regions between the front 455and the back 452 are sides 453; and one of regions surrounded by thefront 455, the back 452, and the sides 453 is a top 454.

FIG. 22A is a back view of the cellular phone illustrated in FIGS. 13Ato 13D.

As illustrated in FIG. 22A, the driver circuit 412 is manufactured so asto be located on the back 452 of the housing 411.

FIG. 22B is a top view of the cellular phone which is rotated 90° to theside from the orientation in FIG. 13C. Images and letters can bedisplayed, whether the cellular phone of this embodiment is placedhorizontally or vertically for a landscape mode or a portrait mode.

As illustrated in FIG. 13A, the housing 411 includes the support 416,and the EL panel 421 is disposed on the support 416. Here, the EL panel421 covers an upper region of the support 416.

In this manner, the display region 413 is present at an upper portion inthe longitudinal direction of the cellular phone. In other words, thedisplay region 413 is present on the top 454. Accordingly, when thecellular phone is put in, for example, a breast pocket, the displayregion 413 can be seen even if the cellular phone is not taken out ofthe pocket.

The display region 413 may be capable of displaying date, phone number,personal name, whether or not there is incoming e-mail or an incomingcall, and the like. If necessary, display may be performed only in aregion of the display region 413 which is on the top 454 and notperformed in the other region, in which case energy saving can beachieved.

A cross-sectional view of FIG. 13D is illustrated in FIG. 25. Asillustrated in FIG. 25, in the housing 411, the EL panel 421 and thetouch panel 423 are disposed along the support 416, and the displayregion 413 is present on the front 455 and the top 454 of the housing411.

A development view of the EL panel 421 and the driver circuit 412 isillustrated in FIG. 26. In FIG. 26, the EL panel 421 is manufactured soas to be located on the top 454 and the back 452, and the driver circuit412 is located on the back 452. In this manner, the EL panel 421 ismanufactured so as to be located on both the front 455 and the top 454,not manufactured separately on the front 455 and the top 454. Thus,manufacturing cost and manufacturing time can be reduced.

The touch panel 423 is disposed on the EL panel 421, and the displayregion 413 displays buttons 414 for the touch panel. By touching thebuttons 414 with a finger or the like, operations displayed in thedisplay region 413 can be performed. Further, making a call or composingmail can be performed by touching the buttons 414 in the display region413 with a finger or the like.

The buttons 414 for the touch panel 423 may be displayed when needed,and when the buttons 414 are not needed, images or letters can bedisplayed in the whole area of the display region 413 as illustrated inFIG. 22B.

Furthermore, an example of a cellular phone in which a display region433 is present also at an upper portion in the longitudinal direction ofthe cellular phone and an upper longer side in a cross-section of thecellular phone also has a curvature radius is illustrated in FIGS. 27Ato 27D and FIG. 28B.

FIG. 27C is a front view of the cellular phone; FIG. 27D is a side view;FIG. 27B is a top view; and FIG. 27A is a cross-sectional view of ahousing 431. The shape of the front of the housing 431 is a rectanglehaving longer sides and shorter sides, which may have round corners. Inthis embodiment, a direction parallel to the longer sides of therectangle is referred to as a longitudinal direction, and a directionparallel to the shorter sides is referred to as a lateral direction.

The cellular phone illustrated in FIGS. 27A to 27D has the housing 431,a housing 402, and the display region 433, operation buttons 404, an ELpanel 441, a touch panel 443, and a support 436 which are incorporatedin the housing 431.

The EL panel 441 and a driver circuit 412 may be formed using thelight-emitting element and the semiconductor circuit element which aredescribed in Embodiment 1. In the EL panel 441, the light-emittingelement is used and the semiconductor circuit element is used as a pixelcircuit for driving the light-emitting element. The driver circuit 412for driving the pixel circuit may be manufactured using a semiconductorcircuit element.

Note that FIG. 28B is a perspective view of the housing 431. In a mannersimilar to FIG. 28A, a region of the housing 431 which has the largestarea is a front 455; a surface opposite to the front 455 is a back 452;regions between the front 455 and the back 452 are sides 453; and one ofregions surrounded by the front 455, the back 452, and the sides 453 isa top 454.

The back view of the cellular phone illustrated in FIGS. 27A to 27D issimilar to FIG. 22A which is the back view of the cellular phoneillustrated in FIGS. 13A to 13D.

In a manner similar to FIG. 22A, the driver circuit 412 is manufacturedso as to be located on the back 452 of the housing 431. The back view ofthe cellular phone illustrated in FIGS. 27A to 27D corresponds to a viewin which the housing 411 in FIG. 22A is replaced with the housing 431.

In the cellular phone illustrated in FIGS. 27A to 27D, the support 436is formed to have a cross-sectional shape in which an upper longer sidehas a curvature radius. Accordingly, the EL panel 441 and the touchpanel 443 each have a cross-sectional shape in which an upper longerside has a curvature radius. In addition, an upper longer side of thehousing 431 is also curved. In other words, the display region 433 onthe front 455 is curved outwards.

When the upper longer side of the support 436 has a curvature radius RI,the curvature radius RI is preferably 20 cm to 30 cm.

Because the upper longer side of the support 436 is curved with thecurvature radius RI, the upper longer sides of the EL panel 441 coveringthe support 436, the touch panel 443 covering the EL panel 441, and thehousing 431 are also curved.

In the cellular phone illustrated in FIGS. 27A to 27D, the displayregion 433 is present also at an upper portion in the longitudinaldirection of the cellular phone. In other words, the display region 433is present also on the top 454. Accordingly, when the cellular phone isput in, for example, a breast pocket, the display region 433 can be seeneven if the cellular phone is not taken out of the pocket.

The display region 433 may be capable of displaying date, phone number,personal name, whether or not there is incoming e-mail or an incomingcall, and the like. If necessary, display may be performed only in aregion of the display region 433 which is on the top 454 and notperformed in the other region, in which case energy saving can beachieved.

A development view of the EL panel 441 and the driver circuit 412 issimilar to FIG. 26, which is the development view of those of thecellular phone illustrated FIGS. 13A to 13D, and corresponds to a viewin which the EL panel 421 in FIG. 26 is replaced with the EL panel 441.In a manner similar to FIG. 26, the driver circuit 412 is located on thetop 454 and the back 452.

This application is based on Japanese Patent Application serial no.2008-294661 filed with Japan Patent Office on Nov. 18, 2008, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. A method of manufacturing a semiconductor devicecomprising: forming a transistor over a first insulating film, whereinthe first insulating film is formed over a substrate; forming a secondinsulating film over the transistor; providing a display element overthe second insulating film, separating the substrate from the firstinsulating film; and attaching a flexible substrate to the firstinsulating film through at least an groupadhesive layer, wherein thedisplay element is electrically connected to the transistor.
 3. Themethod according to claim 2, wherein the first insulating film comprisesat least one film selected from the group consisting of a silicon oxidefilm, a silicon nitride film, a silicon oxide film containing nitrogen,and a silicon nitride film containing oxygen.
 4. The method according toclaim 2, wherein the transistor comprises a channel formation regionwhich comprises an oxide semiconductor material.
 5. The method accordingto claim 2, wherein the transistor comprises a channel formation regionwhich comprises polycrystalline silicon.
 6. The method according toclaim 2, wherein the display element is a light emitting element.
 7. Themethod according to claim 2, wherein the substrate is separated by usinga roller.
 8. A method of manufacturing a semiconductor devicecomprising: forming a transistor over a first insulating film, whereinthe first insulating film is formed over a substrate; forming a secondinsulating film over the transistor; forming an electrode over thesecond insulating film, wherein the electrode is electrically connectedto the transistor; electrically connecting an electrode of a displayelement to the electrode through conductive particles locatedtherebetween; separating the substrate from the first insulating film;and attaching a flexible substrate to the first insulating film throughat least an adhesive layer,
 9. A method of manufacturing a semiconductordevice comprising: forming a transistor over a first side of a firstinsulating film, wherein the first insulating film is formed over asubstrate; forming a second insulating film over the transistor; formingan electrode over the first insulating film, wherein the electrode iselectrically connected to the transistor; separating the substrate fromthe first insulating film, wherein the electrode is electricallyconnected to an electrode of a display element through an opening of thefirst insulating film, wherein the display element is disposed on asecond side of the first insulating film opposite to the first side. 10.The method according to claim 9, wherein the first insulating filmcomprises at least one film selected from the group consisting of asilicon oxide film, a silicon nitride film, a silicon oxide filmcontaining nitrogen, and a silicon nitride film containing oxygen. 11.The method according to claim 9, wherein the transistor comprises achannel formation region which comprises an oxide semiconductormaterial.
 12. The method according to claim 9, wherein the transistorcomprises a channel formation region which comprises polycrystallinesilicon.
 13. The method according to claim 9, wherein the displayelement is a light emitting element.
 14. The method according to claim9, wherein the substrate is separated by using a roller.
 15. The methodaccording to claim 9, further comprising a step of forming a groove inthe first insulating film, wherein the substrate is separated by usingthe groove as a trigger.
 16. A method of manufacturing a semiconductordevice comprising: forming a transistor over a first side of a firstinsulating film, wherein the first insulating film is formed over asubstrate; forming a second insulating film over the transistor; formingan electrode over the first insulating film, wherein the electrode is incontact with a semiconductor layer of the transistor; separating thesubstrate from the first insulating film, wherein the electrode iselectrically connected to an electrode of a display element through anopening of the first insulating film, wherein the display element isdisposed on a second side of the first insulating film opposite to thefirst side.
 17. The method according to claim 16, wherein the firstinsulating film comprises at least one film selected from the groupconsisting of a silicon oxide film, a silicon nitride film, a siliconoxide film containing nitrogen, and a silicon nitride film containingoxygen.
 18. The method according to claim 16, wherein the transistorcomprises a channel formation region which comprises an oxidesemiconductor material.
 19. The method according to claim 16, whereinthe transistor comprises a channel formation region which comprisespolycrystalline silicon.
 20. The method according to claim 16, whereinthe display element is a light emitting element.
 21. The methodaccording to claim 16, wherein the substrate is separated by using aroller.
 22. The method according to claim 16, further comprising a stepof forming a groove in the first insulating film, wherein the substrateis separated by using the groove as a trigger.
 23. The method accordingto claim 16, wherein the electrode is formed over the second insulatingfilm.